Metal plating compositions and methods

ABSTRACT

Disclosed are metal plating compositions and methods. The metal plating compositions provide good leveling performance and throwing power.

The present invention is directed to metal plating compositions andmethods. More specifically, the present invention is directed to metalplating compositions and methods which provide improved leveling andthrowing power.

Metal plating is a complex process that involves multiple ingredients ina plating composition. In addition to metal salts and other ions, whichprovide a source of metal and ionic conductivity, other componentsinclude additives to improve the brightness, ductility and platingdistribution of the metal deposit. Such additives may includesurfactants, brighteners, carriers and levelers.

Uniform distribution of a metal on a substrate is necessary, such as inthe metallization of printed wiring boards which has a surface layer aswell as a number of through-holes and blind vias. If only a thin layerof metal is deposited in these through-holes and blind vias, it may tearunder thermal or mechanical stress, for example during soldering, suchthat the passage of current is interrupted. This type of failure wouldproduce a printed wiring board that is unacceptable for use in anelectronic application. Since printed wiring boards with smaller andsmaller hole diameters are being manufactured, for example 0.25 mm andsmaller, it becomes more and more difficult to simultaneouslyelectroplate an evenly distributed layer of metal onto the surface andinto the through-holes. It has been observed that metal layer thicknessis unsatisfactory in many printed wiring boards, particularly in holeswith small diameters. Achieving a bright metal layer of uniformthickness with high thermal reliability can be challenging for manycircuit board designs.

Many plating formulations use a chemical solution to address the problemof non-uniform plating by adding levelers to the plating bath. Variouscompounds have been used with varying performance. An example of onetype of leveler used in copper plating baths are the transformationproducts formed from epihalohydrins, dihalohydrins or1-halogen-2,3-propandiols and polyamidoamines as disclosed in U.S. Pat.No. 6,425,996. Another example of levelers are those disclosed inJapanese patent S63-52120. These levelers are ethoxylated dicarboxylicacids and ethoxylated diamines. While the compounds disclosed in thesetwo patents allegedly have acceptable leveling performance, there isstill a need for compounds which improve metal plating performance.

In one aspect the invention includes compounds having a general formula:H-A′_(p)-Q-[C(O)—CH₂O—((R₁CH)_(t)—O)_(z)—CH₂—C(O)—NH-A]_(u)-H  (I)whereA′ is —(NH—(CH₂)_(x′))_(y′)—; —NH(CH₂)_(x′),—(O—(CHR₁)_(r′))_(w′)—O—(CH₂)_(x′)—; or —NH—((R₁CH)_(r′)—O)_(w′)—C₂H₄—;A is —((CH₂)_(x)—NH)_(y)—;—(CH₂)_(x)—(O—(CHR₁)_(r))_(w)—O—(CH₂)_(x)—NH—; or—((R₁CH)_(r)—O)_(w)—C₂H₄—NH—;R₁ is —H or —CH₃,Q is —NH— when p=1 or —O— when p=0,p is 0 or 1, wherein H— and Q form a chemical bond when p=0,r′ is an integer from 2 to 4,w′ is an integer from 1 to 50,x′ is an integer from 2 to 6,y′ is an integer from 0 to 5,wherein H— and Q form a chemical bond when y′ is 0,r is an integer from 2 to 4,w is an integer from 1 to 50,x is an integer from 2 to 6,y is an integer from 0 to 5, wherein H— is bonded to the nitrogen ofterminal —C(O)—NH— when y is 0,t is an integer from 2 to 4,u is an integer from 1 to 20,w is an integer from 1 to 50, andz is an integer from 1 to 50.

In another aspect the invention includes a metal plating compositionincluding one or more sources of metal ions and one more compoundshaving a formula:H-A′_(p)-Q-[C(O)—CH₂O—((R₁CH)_(t)—O)_(z)—CH₂—C(O)—NH-A]_(u)-H  (I)whereA′ is —(NH—(CH₂)_(x′))_(y′)—;—NH(CH₂)_(x′)—(O—(CHR₁)_(r′))_(w′)—O—(CH₂)_(x′)—; or—NH—((R₁CH)_(r′)—O)_(w′)—C₂H₄—,A is —(CH₂)_(x)—NH)_(y); —(CH₂)_(x)—(O—(CHR₁)_(r))_(w)—O—(CH₂)_(x)—NH—;or —((R₁CH)_(r)—O)_(w)—C₂H₄—NH—,R₁ is —H or —CH₃,Q is —NH— when p=1 or —O— when p=0,p is 0 or 1, wherein H— and Q form a chemical bond when p=0,r′ is an integer from 2 to 4,w′ is an integer from 1 to 50,x′ is an integer from 2 to 6,y′ is an integer from 0 to 5,wherein H— and Q form a chemical bond when y′ is 0,r is an integer from 2 to 4,w is an integer from 1 to 50,x is an integer from 2 to 6,y is an integer from 0 to 5, wherein H— is bonded to the nitrogen ofterminal —C(O)—NH— when y is 0,t is an integer from 2 to 4,u is an integer from 1 to 20,w is an integer from 1 to 50, andz is an integer from 1 to 50.

In a further aspect the invention includes a method including: providingmetal plating compositions including one or more sources of metal ionsand one or more compounds having a formula:H-A′_(p)-Q-[C(O)—CH₂O—((R₁CH)_(t)—O)_(z)—CH₂—C(O)—NH-A]_(u)-H  (I)whereA′ is —(NH—(CH₂)_(x′))_(y′)—;—NH(CH₂)_(x′)—(O—(CHR₁)_(r′))_(w′)—O—(CH₂)_(x′)—; or—NH—((R₁CH)_(r′)—O)_(w′)—C₂H₄—,A is —((CH₂)_(x)—NH)_(y)—;—(CH₂)_(x)—(O—(CHR₁)_(r))_(w)—O—(CH₂)_(x)—NH—; or—((R₁CH)_(r)—O)_(w)—C₂H₄—NH—;R₁ is —H or —CH₃,Q is —NH— when p=1 or —O— when p=0,p is 0 or 1, wherein H— and Q form a chemical bond when p=0,r′ is an integer from 2 to 4,w′ is an integer from 1 to 50,x′ is an integer from 2 to 6,y′ is an integer from 0 to 5,wherein H— and Q form a chemical bond when y′ is 0,r is an integer from 2 to 4,w is an integer from 1 to 50,x is an integer from 2 to 6,y is an integer from 0 to 5, wherein H— is bonded to the nitrogen ofterminal —C(O)—NH— when y is 0,t is an integer from 2 to 4,u is an integer from 1 to 20,w is an integer from 1 to 50, andz is an integer from 1 to 50; contacting a substrate with thecompositions; and depositing a metal on the substrate.

The water-soluble compounds may be used in metal plating compositions inany industry where metal plating is done. For example, the metal platingcompositions may be used in the manufacture of electrical devices, suchas printed wiring boards, in general, through-holes, vias, integratedcircuits, electrical contact surfaces and connectors, electrolytic foil,silicon wafers for microchip applications, semi-conductors andsemi-conductor packaging, solar cell, lead frames, optoelectronicdevices and packaging and solder bumps. The metal plating compositionsalso may be used for metal plating decorative articles, such as jewelry,furniture fittings, automobile parts and sanitary appliances.

As used throughout this specification, the following abbreviations shallhave the following meanings, unless the context indicates otherwise: °C.=degrees Centigrade; g=gram; mg=milligrams; L=liter; ml=milliliter;dm=decimeter; A=amperes; mm=millimeters; cm=centimeters; ppb=parts perbillion; ppm=parts per million; mbar=millibar; mil=0.001 inches; 2.54cm=1 inch; wt %=percent by weight; NMR=nuclear magnetic resonance;SEC=size exclusion chromatography; and “throwing power”=The ratio of thethickness of the metal plated in the center of a through hole comparedto the thickness of the metal plated at the surface. All percentages areby weight, unless otherwise noted. All molecular weights are ingrams/mole unless otherwise noted. All numerical ranges are inclusiveand combinable in any order, except where it is logical that suchnumerical ranges are constrained to add up to 100%.

The compounds have a general formula:H-A′_(p)-Q-[C(O)—CH₂O—((R₁CH)_(t)—O)_(z)—CH₂—C(O)—NH-A]_(u)-H  (I)whereA′ is —(NH—(CH₂)_(x′))_(y′)—; —NH(CH₂)_(x′),—(O—(CHR₁)_(r′))_(w′)—O—(CH₂)_(x′)—; or —NH—((R₁CH)_(r′)—O)_(w′)—C₂H₄—,A is —((CH₂)_(x)—NH)_(y)—;—(CH₂)_(x)—(O—(CHR₁)_(r))_(w)—O—(CH₂)_(x)—NH—; or—((R₁CH)_(r)—O)_(w)—C₂H₄—NH—,R₁ is —H or —CH₃,Q is —NH— when p=1 or —O— when p=0,p is 0 or 1, wherein H— and Q form a chemical bond when p=0,r′ is an integer from 2 to 4 or such as from 2 to 3,w′ is an integer from 1 to 50 or such as from 1 to 40 or such as from 2to 35,x′ is an integer from 2 to 6 or such as from 2 to 3,y′ is an integer from 0 to 5 or such as from 2 to 3,wherein H— and Q form a chemical bond when y′ is 0,r is an integer from 2 to 4 or such as from 2 to 3,w is an integer from 1 to 50 or such as from 1 to 40 or such as from 2to 35,x is an integer from 2 to 6 or such as from 2 to 3,y is an integer from 0 to 5 or such as from 2 to 3, wherein H— is bondedto the nitrogen of terminal —C(O)—NH— when y is 0,t is an integer from 2 to 4 or such as from 2 to 3,u is an integer from 1 to 20 or such as from 1 to 10,w is an integer from 1 to 50 or such as from 1 to 40 or such as from 2to 35, andz is an integer from 1 to 50 or such as from 1 to 40 or such as from 1to 16.

Typically the compounds include those having a general formula:H-A′_(p)-Q-[C(O)—CH₂O—((R₁CH)_(t)—O)_(z)—CH₂—C(O)—NH-A]_(u)-H  (I)whereA′ is —(NH—(CH₂)_(x′))_(y′)—; —NH(CH₂)_(x′),—(O—(CHR₁)_(r′))_(w′)—O—(CH₂)_(x′)—; or —NH—((R₁CH)_(r′)—O)_(w′)—C₂H₄—,A is —((CH₂)_(x)—NH)_(y)—;—(CH₂)_(x)—(O—(CHR₁)_(r))_(w)—O—(CH₂)_(x)—NH—; or—((R₁CH)_(r)—O)_(w)—C₂H₄—NH—,R₁ is —H or —CH₃,Q is —NH— or —O—,p is 0 or 1, when p is 0 then Q is —O— and when p is 1 then Q is —NH—,r′ is an integer from 2 to 4 or such as from 2 to 3,w′ is an integer from 2 to 36 or such as from 32 to 36, x′ is an integerfrom 2 to 6 or such as from 3 to 6,y′ is an integer from 0 to 5 or such as from 2 to 5 or such as from 3 to5, when y′ is 0 then Q forms a chemical bond with H—,r is an integer from 2 to 4 or such as from 2 to 3,w is an integer from 2 to 36 or such as from 32 to 36,x is an integer from 2 to 6 or such as from 3 to 6,y is an integer from 0 to 5 or such as from 2 to 5 or such as from 3 to5, when y is 0 then H— is bonded to the terminal nitrogen of —C(O)—NH—,t is an integer from 2 to 4 or such as 2 to 3, u is an integer from 1 to5 or such as from 1 to 4 or such as from 1 to 2 or such as from 2 to 5or such as from 3 to 5, andz is an integer from 1 to 13 or such as from 9 to 13 or such as from 1to 3.

More typically such compounds include, but are not limited to:H—((NH(CH₂)₂)₅)_(p)-Q-[C(O)CH₂O((R₁CH)_(t)O)₉₋₁₃—CH₂—C(O)—NH—((CH₂)₂NH)₅]₁₋₂—H  (II)whereR₁ is —H or —CH₃, Q is —NH— whenp is 1 and —O— when p is 0 and t is an integer from 2 to 4 or such asfrom 2 to 3 or such as 2;H—((NH(CH₂)₂)₅)_(p)-Q-[C(O)CH₂O(R₁CH)_(t)O)₁₋₃—CH₂C(O)—NH—((CH₂)₂—NH)₅]₁₋₂—H  (III)whereR₁ is —H or —CH₃, Q is —NH— when p is 1 and —O— when p is 0 andt is an integer from 2 to 4 or such as from 2 to 3 or such as 2;H—(NH(CH₂)₃—(O—(CHR₁)_(r′))₂—O(CH₂)₃)-Q-[C(O)—CH₂O—((R₁CH)_(t)—O)₉₋₁₃—CH₂—C(O)—NH—(CH₂)₃—(O—(R₁CH)_(r))₂—O—(CH₂)₃—NH]₂₋₄—H  (IV)whereR₁ is —H or —CH₃,Q is —NH— when p is 1 and —O— when p is 0,r and r′ may be the same or different and are integers from 2 to 4 orsuch as 2 to 3 or such as 2,and t is an integer from 2 to 4 or such as from 2 to 3 or such as 2;H—(NH—(CH₂)₃—(O—(CHR₁)_(r′))₂—O—(CH₂)₃)_(p)-Q-[C(O)—CH₂—O—((R₁CH)_(t)—O)₁₋₃—CH₂—C(O)—NH—(CH₂)₃—(O—(R₁CH)_(r))₂—O—(CH₂)₃—NH]₂₋₄—H  (V)whereR₁ is —H or —CH₃,Q is —NH— when p is 1 and —O— when p is 0,r and r′ may be the same or different and are integers from 2 to 4 orsuch as from 2 to 3 or such as 2, andt is an integer from 2 to 4 or such as from 2 to 3 or such as 2;H—(NH—(CH₂)₃—(O—(CHR₁)_(r′))₃₂₋₃₆—O—(CH₂)₃)_(p)-Q-[C(O)—CH₂—O—((R₁CH)_(t)—O)₉₋₁₃—CH₂—C(O)—NH—(CH₂)₃—(O—(R₁CH)_(r))₃₂₋₃₆—O—(CH₂)₃—NH]₃₋₅—H  (VI)whereR₁ is —H or —CH₃,Q is —NH— when p is 1 and —O— when p is 0, r and r′ may be the same ordifferent and are integers from 2 to 4 or such as from 2 to 3 or such as2, andt is an integer from 2 to 4 or such as from 2 to 3 or such as 2;H—((NH—(CH₂)₆)_(p)-Q-[C(O)—CH₂—O—((R₁CH)_(t)—O)₁₋₃—CH₂—C(O)—NH—(CH₂)₆—NH]₃₋₅—H  (VII)whereR₁ is —H or —CH₃,Q is —NH— when p is 1 and —O— when p is 0, andt is an integer from 2 to 4 or such as from 2 to 3 or such as 2;H—((NH—(CH₂)₆)_(p)-Q-[C(O)—CH₂—O—((R₁CH)_(t)—O)₉₋₁₃—CH₂—C(O)—NH—(CH₂)₆—NH]₂₋₄—H  (VIII)where R₁ is —H or —CH₃, Q is —NH— when p is 1 and —O— when p is 0, andt is an integer from 2 to 4 or such as from 2 to 3 or such as 2;H—((NH—(CH₂)₆)₂)_(p)-Q-[C(O)—CH₂—O—((R₁CH)_(t)—O)₁₋₃—CH₂—C(O)—NH—((CH₂)₆—NH)₂]₂₋₄—H  (IX)where R₁ is —H or —CH₃, Q is —NH— when p is 1 and —O— when p is 0, and tis an integer from 2 to 4 or such as from 2 to 3 or such as 2;H—(NH—(CH₂)₆)₂)_(p)-Q-[C(O)—CH₂—O—((R₁CH)_(t)—O)₉₋₁₃—CH₂—C(O)—NH—((CH₂)₆—NH)₂]₁₋₃—H  (X)whereR₁ is more typically —H or —CH₃,Q is —NH— when p is 1 and —O— when p is 0, andt is an integer from 2 to 4 or such as from 2 to 3 or such as 2;H—(NH—((R₁CH)_(r′)—O—)₂—C₂H₄)_(p)-Q-[C(O)—CH₂—O—((R₁CH)_(t)—O)₁₋₃—CH₂—C(O)—NH—((R₁CH)_(r)—O)₂—C₂H₄—NH]₂₋₄—H  (XI)where R₁ is —H or —CH₃, Q is —NH— when p is 1 and —O— when p is 0, andt is an integer from 2 to 4 or such as from 2 to 3 or such as 2;H—(NH—((R₁CH)₂—O—)₂—C₂H₄)_(p)-Q-[C(O)—CH₂—O—((R₁CH)_(t)—O)₉₋₁₃—CH₂—C(O)—NH—((R₁CH)₂—O)₂—C₂H₄—NH]₁₋₃—H  (XII)whereR₁ is more typically —H or —CH₃,Q is —NH— when p is 1 and —O— when p is 0, andt is an integer from 2 to 4 or such as from 2 to 3 or such as 2; andH—((NH—(CH₂)₃)₃)_(p)-Q-[C(O)—CH₂—O—((R₁CH)_(t)—O)₉₋₁₃—CH₂—C(O)—NH—((CH₂)₃—NH)₃]₁₋₂—H  (XIII)where R₁ is —H or —CH₃, Q is —NH— when p is 1 and —O— when p is 0, andt is an integer from 2 to 4 or such as from 2 to 3 or such as 2.

Number average molecular weight of the compounds range from 250 andgreater, or such as from 500 to 15,000, or such as from 900 to 10,000.The molecular weight of the compounds may be determined using anyconventional method in the art.

The compounds of formulas (I)-(XIII) may be prepared from one or morepolyethylene glycols and one or more polyalkoxylated diamines oralkylene triamines using conventional condensation reactions.

Polyethylene glycol diacids which may be used to prepare the compoundsof formulas (I)-(XIII) include, but are not limited to, polyethyleneglycol diacids having a formula:HO—C(O)—CH₂—(O—(CHR₂)_(g))_(h)—OCH₂—C(O)—OH  (XIV)where g is an integer from 2 to 4,h is an integer from 1 to 150, and R₂ is —H or —CH₃.Such polyethylene glycol diacids have average number molecular weightsranging from 250 and greater.

Polyalkoxylated diamines used to make the compounds of formulas(I)-(XIII) include, but are not limited to, compounds having a formula:H₂N—(CH₂)_(j)—(O—(CHR₂)_(g))_(h)—(CH₂)_(k)—NH₂  (XV)orH₂N(CH₂)_(m)NH₂  (XVI)where g, h and R₂ are as defined above, j is an integer from 2 to 6, kis an integer from 0 to 6, and m is an integer from 6 to 10.

Alkylene triamines which may be used to make the compounds of formulas(I)-(XIII) include, but are not limited to, compounds having a formula:H₂N—(CH₂—CH₂—NH)_(n)—(CH₂)₂—NH₂  (XVII), orH₂N—(CH₂)_(n)—NH—(CH₂)_(n)—NH₂  (XVIII)

Any conventional method known in the art or published in the literaturemay be used to make the compounds of formulas (I)-(XIII). The startingmaterials may be obtained commercially or synthesized by methods knownin the art and literature. Acid-terminated polyalkyleneglycols may besynthesized by oxidation of the polyalkyleneglycols as disclosed in U.S.Pat. No. 5,250,727 and U.S. Pat. No. 5,166,423 to produce carboxylicacids until all of the hydroxyl groups per molecule are oxidized tocarboxylic acid groups to form a diacid. Acid-terminatedpolyalkyleneglycols may also be made by the well known Williamson ethersynthesis by reacting polyalkyleneglycols with chloroacetic acid in thepresence of a base.

Poly(ethyleneoxide)diamines may be prepared by the reaction of abihydroxyl-initiator with ethylene oxide followed by conversion of theresulting terminal hydroxyl groups to amines. Jeffamine™ brands ofpoly(alkyleneoxide)amines are available from Huntsman Performancechemicals, Houston, Tex., U.S.A., and propylamine-terminatedpolyethyleneoxide is available from ALDRICH.

In general, the reactants may range in weight ratios of 1:1 to 3:1. Thecondensation reaction proceeds under an inert gas atmosphere, such asunder a N₂(g) atmosphere. Temperatures may range from 180° C. to 250° C.with pressures ranging from 10 mbar to atmospheric pressure. Progress ofthe reaction may be monitored by spectrographic methods, such as by NMRspectroscopy.

The amide compounds may be added to metal plating compositions toimprove the performance of metal plating compositions. The amidecompounds are included in metal plating compositions in amounts of 0.001g/L to 5 g/L, or such as from 0.01 g/L to 1 g/L.

One or more sources of metal ions are included in metal platingcompositions to plate metals. The one or more sources of metal ionsprovide metal ions which include, but are not limited to, copper, tin,nickel, gold, silver, palladium, platinum and indium. Alloys include,but are not limited to, binary and ternary alloys of the foregoingmetals. Typically, metals chosen from copper, tin, nickel, gold, silveror indium are plated with the metal plating compositions. Moretypically, metals chosen from copper, tin, silver or indium are plated.Most typically, copper is plated.

Copper salts which may be used in the metal plating compositionsinclude, but are not limited to, one or more of copper halides, coppersulfates, copper alkane sulfonate, copper alkanol sulfonate and coppercitrate. Typically, copper sulfate, copper alkanol sulfonate or mixturesthereof are used in the plating compositions.

Tin salts which may be used in the metal plating compositions include,but are not limited to, one or more of tin sulfates, tin halides, tinalkane sulfonates such as tin methane sulfonate, tin ethane sulfonate,and tin propane sulfonate, tin aryl sulfonate such as tin phenylsulfonate and tin toluene sulfonate, and tin alkanol sulfonate.Typically, tin sulfate or tin alkane sulfonate is used in the platingcompositions.

Gold salts which may be used in the metal plating compositions include,but are not limited to, one or more of gold trichloride, goldtribromide, gold cyanide, potassium gold chloride, potassium goldcyanide, sodium gold chloride and sodium gold cyanide.

Silver salts which may be used in the metal plating compositionsinclude, but are not limited to, one or more of silver nitrate, silverchloride, silver acetate and silver bromate. Typically, silver nitrateis used in the plating compositions.

Nickel salts which may be used in the metal plating compositionsinclude, but are not limited to, one or more of nickel chloride, nickelacetate, nickel ammonium sulfate, and nickel sulfate.

Palladium salts which may be used in the metal plating compositionsinclude, but are not limited to, one or more of palladium chloride,palladium nitrate, palladium potassium chloride and palladium potassiumchloride.

Platinum salts which may be use include, but are not limited to, one ormore of platinum tetrachloride, platinum sulfate and sodiumchloroplatinate.

Indium salts which may be used include, but are not limited to, one ormore of indium salts of alkane sulfonic acids and aromatic sulfonicacids, such as methanesulfonic acid, ethanesulfonic acid, butanesulfonic acid, benzenesulfonic acid and toluenesulfonic acid, salts ofsulfamic acid, sulfate salts, chloride and bromide salts of indium,nitrate salts, hydroxide salts, indium oxides, fluoroborate salts,indium salts of carboxylic acids, such as citric acid, acetoacetic acid,glyoxylic acid, pyruvic acid, glycolic acid, malonic acid, hydroxamicacid, iminodiacetic acid, salicylic acid, glyceric acid, succinic acid,malic acid, tartaric acid, hydroxybutyric acid, indium salts of aminoacids, such as arginine, aspartic acid, asparagine, glutamic acid,glycine, glutamine, leucine, lysine, threonine, isoleucine, and valine.

Additional metals which may be included in the metal platingcompositions include, but are not limited to, one or more of bismuth,cobalt, chromium and zinc. Such metals may be included with one or moreof the metals described above as alloying metals. Sources of bismuthions include, but are not limited to, one or more of bismuth ammoniumcitrate and bismuth phosphate. Sources of cobalt ions include, but arenot limited to, one or more of cobalt ammonium sulfate, cobalt acetate,cobalt sulfate and cobalt chloride. Sources of chromium ions include,but are not limited to, one or more of chromic acetate, chromic nitrateand chromic bromide. Sources of zinc ions include, but are not limitedto, one or more of zinc bromate, zinc chloride, zinc nitrate and zincsulfate.

Binary alloys which may be plated from the metal plating compositionsinclude, but are not limited to, alloys of tin and copper, tin andbismuth, gold and silver, indium and bismuth, indium and zinc, and goldand cobalt. Typically, alloys of tin and copper are plated.

Ternary alloys which may be plated from the metal plating compositionsinclude, but are not limited to, alloys of tin, silver and copper, andgold, silver and copper.

In general, the metal salts are included in the plating compositionssuch that metal ions range in concentrations from 0.01 g/L to 200 g/L,or such as from 0.5 g/L to 150 g/L, or such as from 1 g/L to 100 g/L, orsuch as from 5 g/L to 50 g/L. Typically, metal salts are included inamounts such that metal ion concentrations range from 0.01 to 100 g/L,more typically from 0.1 g/L to 60 g/L.

The metal plating compositions may also include one or more conventionaldiluents. Typically, the metal plating compositions are aqueous;however, conventional organic diluents may be used if desired. Optionalconventional plating composition additives also may be included. Suchadditives include, but are not limited to, one or more of brighteners,suppressors, surfactants, inorganic acids, organic acids, brightenerbreakdown inhibition compounds, alkali metal salts, and pH adjustingcompounds. Additional additives may be included in the metal platingcompositions to tailor the performance of the metal plating for aparticular substrate. Such additional additives may include, but are notlimited to, other levelers and compounds which affect throwing power.Typically, when copper or one of its alloys is plated the platingcomposition includes one or more brighteners and one or moresuppressors.

Brighteners include, but are not limited to, one or more of3-mercapto-propylsulfonic acid sodium salt, 2-mercapto-ethanesulfonicacid sodium salt, bissulfopropyl disulfide (BSDS),N,N-dimethyldithiocarbamic acid (3-sulfopropyl) ester sodium salt (DPS),(O-ethyldithiocarbonato)-S-(3-sulfopropyl)-ester potassium salt (OPX),3-[(amino-iminomethyl)-thio]-1-propanesulfonic acid (UPS),3-(2-benzthiazolylthio)-1-propanesulfonic acid sodium salt (ZPS), thethiol of bissulfopropyl disulfide (MPS), sulfur compounds such as3-(benzthiazoyl-2-thio)-propylsulfonic acid sodium salt,3-mercaptopropane-1-sulfonic acid sodium salt,ethylenedithiodipropylsulfonic acid sodium salt,bis-(p-sulfophenyl)-disulfide disodium salt,bis-(co-sulfobutyl)-disulfide disodium salt,bis-(ω-sulfohydroxypropyl)-disulfide disodium salt,bis-(ω-sulfopropyl)-disulfide disodium salt, bis-(ω-sulfopropyl)-sulfidedisodium salt, methyl-(ω-sulfopropyl)-disulfide sodium salt,methyl-(ω-sulfopropyl)-trisulfide disodium salt, O-ethyl-dithiocarbonicacid-S-(ω-sulfopropyl)-ester, potassium salt thioglycoli acid,thiophosphoric acid-O-ethyl-bis-(ω-sulfpropyl)-ester disodium salt, andthiophosphoric acid-tris(ω-sulfopropyl)-ester trisodium salt.

Brighteners may be added to the metal plating compositions inconventional amounts. In general, brighteners are added in amounts of 1ppb to 1 g/L, or such as from 10 ppb to 500 ppm.

Suppressors include, but are not limited to, one or more of oxygencontaining high molecular weight compounds such ascarboxymethylcellulose, nonylphenolpolyglycol ether,octandiolbis-(polyalkylene glycolether), octanolpolyalkyleneglycolether, oleic acidpolyglycol ester, polyethylenepropylene glycol,polyethylene glycol, polyethylene glycoldimethylether, polyoxypropyleneglycol, polypropylene glycol, polyvinylalcohol, stearic acidpolyglycolester, and stearyl alcoholpolyglycol ether. Typicallypoly(alkoxylated)glycols are used. Such suppressors may be included inthe metal plating formulations in conventional amounts, such as from0.01 g/L to 10 g/L or such as from 0.5 g/L to 5 g/L.

One or more conventional surfactants may be used. Typically, surfactantsinclude, but are not limited to, nonionic surfactants such as alkylphenoxy polyethoxyethanols. Other suitable surfactants containingmultiple oxyethylene groups also may be used. Such surfactants includecompounds of polyoxyethylene polymers having from as many as 20 to 150repeating units. Such compounds also may perform as suppressors. Alsoincluded in the class of polymers are both block and random copolymersof polyoxyethylene (EO) and polyoxypropylene (PO). Surfactants may beadded in conventional amounts, such as from 0.05 g/L to 20 g/L or suchas from 0.5 g/L to 5 g/L.

Conventional levelers include, but are not limited to, one or more ofalkylated polyalkyleneimines and organic sulfo sulfonates. Examples ofsuch compounds include, 4-mercaptopyridine, 2-mercaptothiazoline,ethylene thiourea, thiourea, 1-(2-hydroxyethyl)-2-imidazolidinethion(HIT) and alkylated polyalkyleneimines. Such levelers are included inconventional amounts. Typically, such levelers are included in amountsof 1 ppb to 1 g/L, or such as from 10 ppb to 500 ppm.

One or more inorganic and organic acids are included in the metalplating compositions to increase the solution conductivity of the matrixand also to adjust the pH of the plating composition. Inorganic acidsinclude, but are not limited to, sulfuric acid, hydrochloric acid,nitric acid and phosphoric acid. Organic acids include, but are notlimited to, alkane sulfonic acids, such a methane sulfonic acid. Acidsare included in the plating compositions in conventional amounts.

Alkali metal salts which may be included in the plating compositionsinclude, but are not limited to, sodium and potassium salts of halogens,such as chloride, fluoride and bromide. Typically chloride is used. Suchalkali metal salts are used in conventional amounts.

One or more brightener breakdown inhibiting compounds may be included inthe plating compositions. Brightener breakdown inhibiting compoundsinclude any compound which is compatible with the other components ofthe compositions and prevents or at least inhibits the breakdown ofbrighteners in the plating compositions. Typically, such compounds areincluded in metal plating baths for electroplating with insolubleanodes. Such compounds include, but are not limited to aldehydes such as2,3,4-trihydroxybenzaldehyde, 3-hydroxybenzaldehyde,3,4,5-trihydroxybenzaldehyde, 2,4-dihydroxybenzaldehyde,4-hydroxy-3-methoxy cinnamaldehyde, 3,4,5-trihydroxybenzaldehydemonohydrate, syringealdehyde, 2,5-dihydroxybenzaldehyde,2,4,5-trihydroxybenzaldehyde, 3,5-hydroxybenzaldehyde,3,4-dihydroxybenzaldehyde, 4-hydroxybenzaldehyde, 4-carboxybenzaldehyde,2-chloro-4-hydroxybenzaldehyde, and 3-furanaldehyde. Other aldehydesinclude, but are not limited to, pyridine carboxaldehyde, benzaldehyde,naphthaldehyde, biphenyl aldehyde, anthracene aldehyde, phenanthracenealdehyde, and 2-formyl phenoxy acetic acid.

Hydroxylamines which may function as brightener breakdown inhibitorsinclude, but are not limited to, hydroxylamine sulfate, hydroxylaminenitrate and hydroxylamine chloride. Typically, hydroxylamine sulfate orhydroxylamine nitrate are used.

Various alcohols also may be used as brightener breakdown inhibitors.Such alcohols include, but are not limited to, alkyl, alkenyl andalkynyl alcohols, unbranched and branched, as well as aromatic alcohols,non-aromatic cyclic alcohols and heterocyclic alcohols. Such alcoholsinclude crotyl alcohol, 2-methylene-1,3-propanediol, 3-butene-1-ol, and1,4-anhydro-erythritol. Other alcohols include naphthalene derivativessuch as 1,2-dihydroxynaphthalene, 1,3-dihydroxynaphthalene,2,3-dihydroxynaphthalene, 2,4-dihydroxynaphthalene,2,7-dihydroxynaphthalene, 2,6-dihydroxynaphthalene,4,5-dihydroxynaphthalene-2,7-disulfonic acid disodium salt,6,7-dihydroxynaphthalene-2,7-disulfonic acid, 6-hydroxy-2-naphthalenesulfonic acid, 4-amino-5-hydroxy-2,7-naphthalene disulfonic acidmonosodium salt, 1,5-dihydroxy-1,2,3,4-tetrahydra-naphthalene,2,6-dihydroxynaphthalene, 1,5-dihydroxynaphthalene,1-naphthol-3,6-disulfonic acid disodium salt hydrate,decahydro-2-naphthol, 1,2,3,4-tetrahydro-1-naphthol, 2-naphthalenemethanol, 1,6-dihydroxynaphthalene, 6,7-dihydroxy-2-naphthalene sulfonicacid hemihydrate, and 4-hydroxy-1-naphthalene sulfonic acid sodium salt.Preferred aromatic alcohols include 5-methoxyresorcinol,4-chlororesorcinol, 2-nitroresorcinol, 2-allyl phenol,1,2,4-benzenetriol, isoeugenol, α,α,α-trifluoro-m-cresol, 4-tert-butylcatechol, 3-hydroxy-1-benzyl alcohol, 4-hydroxybenzyl alcohol,phloroglucinol dihydrate and anhydride, olivetol, and 3-chlorophenol.

Examples of other suitable alcohols include 1,2-benzenedimethanol,1,3-benzenedimethanol, 4-aminophenol, 4-methoxyphenol,4-ethylresorcinol, hydroquinone, chloroquinone, hydroquinone sulfonicacid potassium salt, 4-(methylthio)-benzyl alcohol, benzyl alcohol,coniferyl alcohol, 3-methoxycatechol, 4-mercapto-phenol,4,4′-thiodiphenol, 3-methoxy phenol, phenol, cresol, and orcinolmonohydrate. Other preferred compounds include, but are not limited to,2′,4′,6′-trihydroxyacetophenone monohydrate,2,5-dihydroxy-1,4-benzoquinone, and tetrahydroxy-1,4-quinonehydrate.

Heterocyclic compounds include saturated lactones or lactones having oneor more double bonds. Such lactones include ascorbic acid andα-hydroxy-γ-butyrolactone. Also included are the metal salts of suchlactones such as the sodium, potassium and iron salts. Examples of otherheterocyclic compounds include 2-hydroxybenzofuran,5,6-dihydro-4-hydroxy-6-methyl-2H-pyran-2-one, 2-hydroxybenzofuran,naringin hydrate, sesamol, 2,4-dihydroxy-6-methyl pyrimidine, and1,2,4-triazolo(1,5-A)-pyrimidine.

Examples of other suitable compounds include 3-furanmethanol,2,4,5-trihydroxy-pyrimidine, 5,6-isopropylidene ascorbic acid, anddehydroascorbic acid.

Organic acids also may function as brightener breakdown inhibitors. Suchacids include, but are not limited to, one or more of2,6-dihydroxybenzoic acid, 4-hydroxybenzoic acid resorcinol,2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid,2,4,6-trihydroxybenzoic acid, 2,3,4-trihydroxybenzoic acid,methyl-3,4,5-trihydroxybenzoate, methyl-2,4-dihydroxybenzoate,4-hydroxymandelic acid monohydrate, 3-(phenylthio)acetic acid,4-hydroxybenzene sulfonic acid, gallic acid, 4-vinylbenzoic acid,3,4-dihydroxy cinnamic acid, 4-methoxy cinnamic acid, 2-hydroxy cinnamicacid, phthalic acid, trans-3-furanyl acrylic acid, vinyl acetic acid,and sulfanilic acid. Also included are acid anhydrides such as phthalicanhydride.

Other compounds which may function as brightener break down inhibitorsinclude, but are not limited to, methyl sulfoxide, methyl sulfone,tetramethylene sulfoxide, thioglycolic acid, 2 (5H) thiophenone,1,4-dithiane, trans-1,2-dithiane, 4,5-diol, tetrahydrothiophen-3-one,3-thiophenemethanol, 1,3,5-trithiane, 3-thiophenacetic acid,thiotetronic acid, thioctic acid, crown ethers, crown thioethers,tetrapyrids, ethane thiosulfonate, (2-sulfonatoethyl)methane sulfonate,carboxyethylmethane thiosulfonate, 2-hydroxyethylmethane thiosulfate,1,4-butanediyl bismethane thiosulfonate, 1,2-ethanediyl bismethanethiosulfonate, 1,3-propanediyl methane thiosulfonate,(3-sulfonatopropyl)methane thiosulfonate, propylmethane thiosulfonate,p-tolyldisulfoxide, p-tolyldisulfone, bis(phenylsulfonyl) sulfide,isopropyl sulfonyl chloride, 4-(chlorosulfonyl) benzoic acid,dipropyltrisulfide, dimethyltrisulfide, dimethyltetrasulfide,bis(3-triethoxysilyl) propyltetrasulfide, phenyl vinyl sulfone,4-hydroxy-benzene sulfonic acid,1,4,7,10,13,16-hexamethyl-1,4,7,10,13,16-hexaazacyclooctadecane,1,4,7,10-tetra-p-tosyl-1,4,7,10-tetraazacyclododecane, and1,4,10,13-tetraoxa-7,16-diazacyclooctadecane.

Brightener breakdown inhibitors are included in the plating compositionsin amounts of 0.001 g/L to 100 g/L. Typically, such compounds areincluded in amounts of 0.01 g/L to 20 g/L.

The measured pH of the metal plating compositions may range from −1 to14, or such as from −1 to 8. Typically, the measured pH of the platingcompositions ranges from −1 to 5, more typically, from −1 to 3.Conventional buffering compounds may be included to control the pH ofthe compositions.

The metal plating compositions may be used to plate a metal or metalalloy on a substrate by any method known in the art and literature.Typically, the metal or metal alloy is electroplated using conventionalelectroplating processes with conventional apparatus. A soluble orinsoluble anode may be used with the electroplating compositions.

Pulse plating or direct current (DC) plating or a combination of DC andpulse plating may be used. Such plating processes are known in the art.Current densities and electrode surface potentials may vary depending onthe specific substrate to be plated. Generally, anode and cathodecurrent densities may vary from 0.01 to 15 A/dm². Low speed platingranges from 0.1 A/dm² to 3 A/dm². High speed plating ranges from 3 A/dm²and higher, typically from 3 A/dm² to 15 A/dm². Plating baths aremaintained in a temperature range of from 20° C. to 110° C., or such asfrom 20° C. to 50° C. Plating temperatures may vary depending on themetal to be plated.

Including the amides in metal plating compositions provide at leastimproved leveling performance over many conventional metal platingcompositions. Such metal plating compositions may be used in metalplating in the manufacture of electrical devices such as printed wiringboards, including the plating of through-holes and vias, integratedcircuits, electrical contact surfaces and connectors, electrolytic foil,silicon wafers for microchip applications, semi-conductors andsemi-conductor packaging, lead frames, optoelectronics andoptoelectronic packaging, and solder bumps. Additionally, the metalplating compositions may be used for metal plating decorative articlessuch as jewelry, furniture fittings, automobile parts, and sanitaryappliances.

The following examples are provided to better illustrate the invention,but are not intended to limit the scope of the invention.

EXAMPLE 1

24 g of poly(ethylene glycol) bis(carboxymethyl)ether 600 with a numberaverage molecular weight of 600 from Fluka (Chemical company—Buchs,Switzerland) is reacted for 6 hours at 190-200° C. with 19 gpentaethylene-hexamine from ALDRICH at a molar ratio of 1:1.7 in a roundbottom flask with a short glass tube, distillation head, Liebigcondenser and receiver flask under constant inert gas supply. Water isdistilled out of the flask. The reaction liquid is heated using acondenser and receiver flask at 200° C. and 15 mbar. The remainingproduct is dissolved in water and extracted with ether. The water phaseis dried by evaporation to yield a polyamidoamine having a formula:H—(NH—(CH₂)₂)₅NH—[C(O)CH₂O(C₂H₄)₁₁—CH₂—C(O)—NH—((CH₂)₂—NH)₅]—H  (XIX)The structure is determined using carbon 13 and hydrogen 1 NMRspectroscopy. The number average molecular weight is 1050 as determinedby SEC.

EXAMPLE 2

13 g polyethyleneglycol-bis(carboxymethylether) 250 from ALDRICH with anumber average molecular weight of 250 is reacted as described inExample 1 for 6 hours at 190-200° C. with 23 g of pentaethylene-hexamineat a molar ration of 1:2. The reaction is completed at 200° C. at 30mbar. The structure is determined using NMR spectroscopy.

The structure of the polyamidoamine is then determined using carbon 13and hydrogen 1 NMR spectroscopy. The polyamidoamine has the followingformula:H—(NH—(CH₂)₂)₅—NH—[C(O)—CH₂O—(C₂H₄O)—CH₂—C(O)—NH—((CH₂)₂—NH)₅]—H  (XX)The number average molecular weight is 600-650 as determined by SEC.

EXAMPLE 3

18 g of polyethyleneglycol bis (carboxymethylether) 600 is reacted with7 g of 4,7,10-trioxa-1,13-tridecanediamine from ALDRICH for 2 hours at190-240° C. as described under Example 1. The molar ratio of thereactants is 1:1.1. The reaction water is distilled out and the producthas a formula:HO—[C(O)—CH₂—O—(C₂H₄O)₁₁—CH₂—C(O)—NH—(CH₂)₃—(OC₂H₄)₂—O—(CH₂)₃—NH]₃—H  (XXI)The formula is determined using NMR spectroscopy. The number averagemolecular weight is 2430 as determined by SEC.

EXAMPLE 4

10 g of polyethyleneglycol bis (carboxymethylether) 250 is reacted with18 g of 4,7,10-trioxa-1,13-tridecanediamine for 1 hour at 180-220° C. asdescribed in Example 1 at a molar ratio of 1:2. The reaction iscompleted by heating to 220-250° C. at 30 mbar for 4 hours and after afurther 3 hours at 250° C. at 1 mbar. The structure of the reactionproduct is determined by NMR spectroscopy and has the followingstructure:H₂N(CH₂)₃—(OC₂H₄)₂—O—(CH₂)₃—NH—[C(O)—CH₂—O—(C₂H₄O)₂—CH₂—C(O)—NH—(CH₂)₃—(OC₂H4)2-O(CH₂)₃—NH]₃—H  (XXII)The number average molecular weight is 1600 as determined by SEC.

EXAMPLE 5

6 g of polyethyleneglycol bis(carboxymethylether) 600 is reacted for 2hours at 230-240° C. with 16 g of O,O′-bis(3-aminopropyl) polyethyleneglycol 1500 from ALDRICH at a molar ratio of 1:1. The reaction apparatusis the same as described in Example 1. The reaction water is distilledout to yield a brownish solid. The product is dissolved in water andfiltrated through an active charcoal filter and then fine filtrated. Theproduct is dried by evaporation. The structure of the reaction productis determined by NMR spectroscopy and has the following structure:HO—[C(O)—CH₂O(C₂H₄O)₁₁—CH₂C(O)—NH—(CH₂)₃—(OC₂H₄)₃₄—O—(CH₂)₃—NH]₄—H  (XXIII).The number average molecular weight is 8800 as determined by SEC.

EXAMPLE 6

24 g of polyethyleneglycol bis(carboxylmethylether) 250 is reacted for 5hours at 200° C. with 18 g of 1,6-diaminohexane from ALDRICH at a molarratio of 1:1.6. The apparatus is the same as described in Example 1. Thereaction water is distilled out with some educt. The educt is dissolvedin water. The water is evaporated and the educt is distilled out at210-220° C. at 30 mbar over 3 hours. A yellowish wax product isobtained. The structure of the product is determined by NMR spectroscopyand has the following structure:H₂N—(CH₂)₆—NH—[C(O)—CH₂—O—(CH₂H₄O)₂—CH₂—C(O)—NH—(CH₂)₆—NH]₄—H  (XXIV)The molecular weight as determined by SEC 1300.

EXAMPLE 7

24 g of polyethyleneglycol-bis(carboxymethylether) 600 are reacted for3.5 hours at 200-210° C. with 9.5 g of 1,6-diaminohexane at a molarratio of 1:2. The reaction is carried out using the same apparatus asdescribed in Example 1 above. The reaction water is distilled out withsome amine. Further amine is removed at 200-210° C. at 30 mbar to yielda product having a formula:H₂N—(CH₂)₆—NH—[C(O)—CH₂—O—(C₂H₄O)₁₁—CH₂—C(O)—NH—(CH₂)₆—NH]₃—H  (XXV)The number average molecular weight is determined to be 2200 by SEC.

EXAMPLE 8

12.5 g of polyethyleneglycol-bis(carboxymethylether) 250 are reactedwith 19 g of bis(hexamethylene)triamine for 4.5 hours at 200-230° C. ata molar ratio of 1:1.8. The reaction water is distilled out. Heating iscontinued at 240° C. for 5 hours and then over 1 hour at 250° C. at 30mbar leaving a syrupy oil which solidified upon standing at roomtemperature. The oil is soluble in water as a turbid solution and as aclear solution upon addition of concentrated laboratory grade sulfuricacid. The polycondensate has the following formula:H(NH—(CH₂)₆)₂—NH—[C(O)—CH₂—O—(C₂H₄₀)₂—CH₂—C(O)—NH—((CH₂)₆—NH)₂]₃—H  (XXVI)The number average molecular weight is 1400.

EXAMPLE 9

24 g of polyethyleneglycol-bis(carboxymethylether) 600 is reacted with15 g of bis(hexamethylene)triamine for 1 hour at 200-210° C. at a molarratio of 1:1.7. The reaction water is distilled out. Heating iscontinued at 240° C. for 5 hours and finally at 240° C. at 30 mbar over5 hours. The product has the following formula:H₂N—(CH₂)₆—NH—(CH₂)₆—NH—[C(O)—CH₂—O—(C₂H₄O)₁₁—CH₂—C(O)—NH—(CH₂)₆—NH—(CH₂)₆—NH]₂H  (XXVII)The number average molecular weight is 1800.

EXAMPLE 10

12.5 g of polyethyleneglycol-bis(carboxymethylether) 250 are reactedwith 15 g of 2,2′-ethylenedioxybisethylamine for 2.5 hours at 180-185°C. and for 1.5 hours at 200-210° C. at a molar ratio of 1:2. Thereaction water is distilled out. After heating for an additional 2 hoursat 220° C. at 30 mbar, an oil is obtained. The oil product has aformula:H₂N—(C₂H₄O)₂—C₂H₄—NH—[C(O)—CH₂O—(C₂H₄O)₂—CH₂—C(O)—NH—(C₂H₄O)₃C₂H₄—NH]₃—H  (XXVIII)The number average molecular weight is 1150.

EXAMPLE 11

21 g of polyethyleneglycol-bis(carboxymethylether) 600 is reacted with10 g of 2,2′-ethylenedioxybisethylamine for 4 hours at 200-210° C. at amolar ratio of 1:2. The reaction water is distilled out. After heatingfor an additional 2 hours at 220° C. at 30 mbar an oil is obtained. Theoil is dissolved in water and treated with active charcoal. It is thenfine filtrated, dried and lyophilized to yield brownish syrupy oil. Theproduct has a formula:H₂N—(C₂H₄O)₂—C₂H₄—NH—[C(O)—CH₂O—(C₂H₄O)₁₁—CH₂—C(O)—NH—(C₂H₄O)₂—C₂H₄—NH]₂—H  (XXIX)The number average molecular weight is 1600.

EXAMPLE 12

16 g of polyethyleneglycol-bis(carboxymethylether) 600 is reacted with10 g of N,N′-bis-(3-aminopropyl)-1,3-propanediamine at a molar ratio of1:2 for 2.5 hours at 180-190° C. and then for 1.5 hours at 200-220° C.The reaction water is distilled out. Further heating is then carried outat 250° C. at 15 mbar. A black oil remained in the reaction vessel. Theoil is dissolved in water and treated with active charcoal. Orange oilis obtained after filtration and drying by evaporation. The product hasa formula:H—(NH(CH₂)₃)₃—NH—[C(O)—CH₂O—(CH₂O—(C₂H₄O)₁₁—CH₂—C(O)—NH((CH₂)₃—NH)₃]-H  (XXX)The molecular weight of the product is 960.

EXAMPLE 13

A stock solution of an aqueous copper plating composition is preparedwith the following concentrations of materials: 80 g/L copper sulfatepentahydrate, 225 g/L sulfuric acid and hydrochloric acid in sufficientamount to provide 60 mg/L chloride ions. Aliquots are taken from thestock solution to make fourteen 1400 ml solutions containing abrightener and a suppressor. Twelve of the solutions also include acompound from Examples 1-12. The table below discloses the fourteenformulations.

TABLE 1 SOLUTION Compound Brightener Suppressor 1 Example 1 BSDSCopolymers of EO/PO 2 Example 2 DPS Carboxymethylcellulose 3 Example 3ZPS Polyethylene glycol 4 Example 4 OPX Polyvinyl alcohol 5 Example 52-mercapto-ethansulfonic Oleic acidopolyglycol ester acid 6 Example 6UPS Polyethylene glycol 7 Example 7 BSDS Nonylphenolpolyglycol ether 8Example 8 3-mercaptopropane-1-sulfonic Polyvinyl alcohol acid 9 Example9 UPS Polyethylene glycol dimethyl ether 10 Example 10 MPSCarboxymethylcellulose 11 Example 11 Potassium salt of Polyethyleneglycol thioglycolic acid 12 Example 12 EthylenedithiopropylsulfonicPolyethylenepropylene acid glycol 13 0 (control) BSDS Copolymer of EO/PO14 0 (control) MPS Polyethylene glycol

The compounds from Examples 1-12 are included in the samples in amountsof 1 g/L. The brighteners are included in amounts of 0.01 g/L and thesuppressors are included in amounts of 0.5 g/L. Each 1400 ml aliquot ofthe aqueous copper plating composition is then added to a conventionalHaring cell. Phosphorized copper anodes are immersed in either side ofthe Haring cell and are electrically connected to a conventionalrectifier. A double sided copper clad panel (0.16 cm thick, 5 cm×15 cm)is then immersed in the center of the Haring cell, and the panels arethen plated for 50 minutes at 3 A/dm² with air agitation. Electroplatingis done at room temperature.

After 50 minutes the panels are removed, immersed in an anti-tarnishsolution of 20% by volume aqueous Antitarnish™ 7130 (obtainable fromRohm and Haas electronic materials, Marlborough, Mass.) and air-driedwith a blower. The copper plating on the panels which are plated in thesolutions with the compounds of Examples 1-12 are expected to be brightand smooth. Additionally, no observable defects on the panels, such asnodules, step plating and fingerprints are expected to be observable. Incontrast, the panels which are plated with the solutions without thecompounds of Examples 1-12 are expected to be hazy.

The procedure above is repeated with three new sets of panels. One setis plated at 1 A/dm² for 150 minutes, the second set is plated at 2A/dm² for 70 minutes and the third set is plated at 4 A/dm² for 35minutes. All of the panels electroplated with samples containing thecompounds of Examples 1-12 are expected to have bright and smooth copperplating with no observable defects. In contrast, the samples which donot include the compounds of Examples 1-12 are expected to be hazy.

EXAMPLE 14

A copper electroplating stock solution as described in Example 13 isprepared. Fifty 1400 ml aliquots are taken from the stock solution tomake fifty separate test solutions. The composition of each testsolution is disclosed in Table 2 below.

TABLE 2 SAMPLES Compounds Brightener Suppressor 1-4 Example 1 BSDSCopolymer of EO/PO 5-8 Example 2 UPS Polyethylene glycol  9-12 Example 3MPS Polyvinyl alcohol 13-16 Example 4 DPS Polyethylene glycol 17-20Example 5 OPX Carboxymethylcellulose 21-24 Example 6 ZPS Copolymer ofEO/PO 25-28 Example 7 BSDS Polyethylene glycol 29-32 Example 8 OPXPolyvinyl alcohol 33-36 Example 9 MPS Polyethylene glycol 37-40 Example10 BSDS Carboxymethylcellulose 41-44 Example 11 ZPS Polyvinyl alcohol45-48 Example 12 DPS Copolymer of EO/PO 49 0 (control) BSDS Polyethyleneglycol 50 0 (control) MPS Polyethylene glycol

Each sample includes brighteners in amounts of 1 g/L and the suppressorsin amounts of 5 g/L. The amounts of the compounds from Examples 1-12 ineach sample are varied. Samples 1-4 include the compound from Example 1in amounts of 0.001 g/L, 0.01 g/L, 0.5 g/L and 1 g/L, respectively.Samples 5-8 include the compound from Example 2 in amounts of 0.005 g/L,0.01 g/L, 0.5 g/L and 1 g/L, respectively. Samples 9-12 include thecompound from Example 3 in amounts of 0.05 g/L, 0.25 g/L, 0.5 g/L and 1g/L, respectively. Samples 13-16 include the compound from Example 4 inamounts of 0.01 g/L, 0.25 g/L, 0.5 g/L and 1 g/L, respectively. Samples17-20 include the compound from Example 5 in amounts of 0.001 g/L, 0.05g/L, 0.1 g/L and 1 g/L, respectively. Samples 21-24 include the compoundfrom Example 6 in amounts of 0.001 g/L, 0.01 g/L, 0.5 g/L and 1 g/L,respectively. Samples 25-28 include the compound from Example 7 inamounts of 0.01 g/L, 0.25 g/L, 0.5 g/L and 1 g/L, respectively. Samples29-32 include the compound of Example 8 in amounts of 0.001 g/L, 0.01g/L, 0.1 g/L and 1 g/L, respectively. Samples 33-36 include the compoundof Example 9 in amounts of 0.05 g/L, 0.25 g/L, 0.75 g/L and 1 g/L,respectively. Samples 37-40 include the compound of Example 10 inamounts of 0.05 g/L, 0.25 g/L, 0.5 g/L and 0.75 g/L, respectively.Samples 41-44 include the compound from Example 11 in amounts of 0.05g/L, 0.1 g/L, 0.5 g/L and 1 g/L, respectively. Samples 45-48 include thecompound of Example 12 in amounts of 0.01 g/L, 0.5 g/L, 0/75 g/L and 1g/L, respectively.

Each sample is placed in a Haring cell and phosphorized copper anodesare immersed in either side of each Haring cell. The cells areelectrically connected to a conventional rectifier. A double sidedcopper clad panel (0.16 cm thick, 5 cm×15 cm) with multiple 0.2 mmdiameter through-holes are placed in the center of each haring cell.Each panel is electroplated for 50 minutes at 3 A/dm² with airagitation. Electroplating is done at room temperature. Afterelectroplating is completed the panels are removed from the Hering cellsand cross-sectioned to inspect the thickness of the copper plating ofthe through-holes. The through-holes are inspected using an opticalmicroscope at 200× magnification. The through-holes with the samplescontaining the compounds of Examples 1-12 are expected to show improvedthrowing power by having thicker and more uniform copper layers in thecenter of the through holes than the two control samples.

EXAMPLE 15

An aqueous tin plating composition which includes 20 g/L of tin ionsfrom tin sulfate, 40 g/L of sulfuric acid, 0.5 g/L of an ethyleneoxide/propylene oxide copolymer having an average molecular weight of2200, 10 ml/L of sulfated alkyl ethoxylate (TRITON™ QS-15) and 0.1 g/Lof compound XIX of Example 1 is placed in a Haring cell as described inExample 13. The pH of the tin plating composition is less than 1 and thetemperature is 30° C. The substrate is a bronze coupon 5 cm×15 cm. Tinelectroplating is done at 3 A/dm² for 50 minutes. The tin layer isexpected to be smooth and free of any observable defects.

EXAMPLE 16

An aqueous tin/copper alloy plating composition which includes 30 g/L oftin ions from tin sulfate, 20 g/L of copper ions from copper sulfatepentahydrate, 50 g/L of sulfuric acid, 1 g/L of an ethyleneoxide/propylene oxide copolymer having an average molecular weight of3000, 20 ml/L of a polyethoxylated amine (JEFFAMINE™ T-403, availablefrom Huntsman Corporation) and 0.1 g/L of compound XX of Example 2 isplaced in a Haring cell as described in Example 13. The pH of thetin/copper plating composition is less than 1 and the temperature is 30°C. The substrate is a bronze coupon 5 cm×15 cm. Tin/copperelectroplating is done at 4 A/dm² for 35 minutes. The tin/copper alloylayer is expected to be smooth and free of any observable defects.

EXAMPLE 17

An aqueous tin/bismuth alloy plating composition which includes 25 g/lof tin ions from tin sulfate, 10 g/L of bismuth ions from bismuthtrichloride, 90 g/L of sulfuric acid, 2 g/L of an ethyleneoxide/propylene oxide copolymer with an average molecular weight of2500, 10 ml/L of sulfated alkyl ethoxylate (TRITON™ QS-15) and 0.1 g/Lof compound XXI of Example 3 is placed in a Haring cell as described inExample 13. The pH of the tin/bismuth composition is less than 1 and thetemperature is at 30° C. The substrate is a bronze coupon 5 cm×15 cm.Tin/bismuth electroplating is done at 2 A/dm² for 60 minutes. Thetin/bismuth alloy layer is expected to be smooth and free of anyobservable defects.

EXAMPLE 18

An aqueous tin/indium alloy plating composition which includes 35 g/L oftin ions from tin sulfate, 5 g/L of indium ions from indium trichloride,50 g/L of sulfuric acid, 1 g/L of an ethylene oxide/propylene oxidecopolymer with an average molecular weight of 5000, 10 ml/L of asulfated alkyl ethoxylate (TRITON™ QS-15), and 0.1 g/L of XXII ofExample 4 is placed in a Haring cell as described in Example 13. The pHof the tin/indium composition is less than 1 and the temperature is at30° C. The substrate is a bronze coupon 5 cm×15 cm. Tin/indiumelectroplating is done at 1 A/dm² for 100 minutes. The tin/indium alloylayer is expected to be smooth and free of any observable defects.

EXAMPLE 19

An aqueous tin/silver/copper alloy plating composition which includes 40g/L tin ions from tin methane sulfonate, 1 g/L silver ions from silvermethane sulfonate, 1 g/L copper from copper methane sulfonate, 90 g/Lmethane sulfonic acid, 2 g/L ethoxylated bis phenol, 4 g/L1-allyl-2-thiourea and 0.1 g/L of compound XXIII of Example 5 is placedin a Haring cell as described in Example 13. The pH of thetin/silver/copper composition is 1 and the temperature is at 30° C. Thesubstrate is a bonze coupon 5 cm×15 cm. Tin/silver/copper electroplatingis done at 2 A/dm² for 100 minutes. The tin/silver/copper alloy layer isexpected to be smooth and free of any observable defects.

EXAMPLE 20

The metal plating process described in Example 15 is repeated with thesame type of tin plating composition and metal plating parameters exceptthat the compound is compound XXIV of Example 6. The tin layersdeposited on the panels are expected to be smooth and without observabledefects.

EXAMPLE 21

The metal plating process described in Example 15 is repeated with thesame type of tin plating composition and metal plating parameters exceptthat the compound is compound XXV of Example 7. The tin layers depositedon the panels are expected to be smooth and without observable defects.

EXAMPLE 22

The metal plating process described in Example 16 is repeated with thesame type of tin/copper plating composition and metal plating parametersexcept that the compound is compound XXVI of Example 8. The tin/copperlayers on the panels are expected to be smooth and without observabledefects.

EXAMPLE 23

The metal plating process described in Example 16 is repeated with thesame type of tin/copper plating composition and metal plating parametersexcept that the compound is compound XXVII of Example 9. The tin/copperlayers on the panels are expected to be smooth and without observabledefects.

EXAMPLE 24

The metal plating process described in Example 17 is repeated with sametype of tin/bismuth plating composition and metal plating parametersexcept the compound is compound XXVIII of Example 10. The tin/bismuthlayers on the panels are expected to be smooth and without observabledefects.

EXAMPLE 25

The metal plating process described in Example 17 is repeated with thesame type of tin/bismuth plating composition and metal platingparameters except that the compound is compound XXIX of Example 11. Thetin/bismuth layers on the panels are expected to be smooth and withoutobservable defects.

EXAMPLE 26

The metal plating process described in Example 16 is repeated with thesame type of tin/copper plating composition and metal plating parametersexcept that the compound is compound XXX of Example 12. The tin/copperlayers on the panels are expected to be smooth and without observabledefects.

EXAMPLE 27

A series of experiments was performed to compare the effect of theleveler component on the thickness of the deposited copper electroplatedfrom a copper plating bath. In each case below an individual leveler(or, in some cases, no leveler) was added to a copper plating bath, apanel was then electroplated, the panel was then processed, and thethickness of the electroplated copper deposit was then measured both onthe surface of the panel as well as in the center of the through holesdrilled into the panel. After the plating experiment, the solution wasdiscarded and fresh stock solution was used in the next experiment.

A stock solution of an aqueous copper plating bath was prepared with thefollowing concentration of inorganic materials: 75 g/L copper sulfatepentahydrate, 190 g/L sulfuric acid, and hydrochloric acid in sufficientamount to provide 60 mg/L chloride ions. 3 mL/L of Rohm and HaasElectronic Materials' Copper Gleam™ ST-901A additive (brightener) and1.5 g/L of a poly(alkoxylated)glycol (suppressor) were added to thestock solution. 1500 mL of this solution was then added to a Haringcell. Phosphorized copper slabs were immersed at either side of theHaring cell, and were used as anodes during the plating cycle. A doublesided copper clad panel (1.6 mm thick, 5 cm×10 cm plating area) wasplaced in the center of the Haring cell, and served as the cathodeduring the plating cycle. Air agitation was used throughout the platingexperiment. Through holes have been drilled into the panel, and thepanel was processed such that a thin, but adherent, layer of copper(20-25 mm) was chemically deposited onto the entire exposed surface ofthe panel, including the through holes. An amount of leveler or noleveler was then added to the solution in the Haring cell. Copper wasthen electroplated at a current density of 3 A/dm² for 50 minutes. Thepanel was then rinsed in deionized water. An area of the board was thenprocessed such that the thickness of the copper plated on the surfaceand in the center of the through holes (0.32 mm diameter) was measured.The measure of the copper thickness in the center of the through holeswas an indication of the throwing power of the bath, or the ability of aparticular plating bath to electroplate copper inside the through holes.A thicker deposit measured in the through hole indicated a higherthrowing power, and was more desirable. The measured copper thicknessfrom plating baths containing various levelers is shown in Table 3.

TABLE 3 Structure number Leveler concentration, g/L Copper thickness,mil No leveler 0 0.56 XIX 0.005 0.77 XIX 0.025 1.00 XX 0.005 1.00 XX0.010 1.00 XX 0.025 0.98 XXI 0.010 0.69 XXI 0.150 0.65 XXIII 0.010 0.61XXIII 0.150 0.71 XIV 0.001 0.81 XIV 0.010 0.75 XIV 0.025 0.95 XIV 0.0500.98 XXV 0.010 0.68 XXV 0.025 0.65

All levelers showed an improvement in the thickness of the copper platedat the center of the through hole compared to plating baths thatcontained no leveler.

1. A composition comprising one or more sources of metal ions chosenfrom copper, tin, nickel, gold, silver, palladium, platinum, indium oralloys thereof, and one more compounds having a formula:H-A′_(p)-Q-[C(O)—CH₂O—((R₁CH)_(t)—O)_(z)—CH₂—C(O)—NH-A]_(u)-H  (I) whereA′ is —(NH—(CH₂)_(x′))_(y′)—;—NH(CH₂)_(x′)—(O—(CHR₁)_(r′))_(w′)—O—(CH₂)_(x′)—; or—NH—((R₁CH)_(r′)—O)_(w′)—C₂H₄—, A is —((CH₂)_(x)—NH)_(y)—;—(CH₂)_(x)—(O—(CHR₁)_(r))_(w)—O—(CH₂)_(x)—NH—; or—((R₁CH)_(r)—O)_(w)—C₂H₄—NH—, R₁ is —H or —CH₃, Q is —NH— when p=1 or—O— when p=0, p is 0 or 1, wherein H— and Q form a chemical bond whenp=0, r′ is an integer from 2 to 4, w′ is an integer from 1 to 50, x′ isan integer from 2 to 6, y′ is an integer from 0 to 5, wherein H— and Qform a chemical bond when y′ is 0, r is an integer from 2 to 4, w is aninteger from 1 to 50, x is an integer from 2 to 6, y is an integer from0 to 5, wherein H— is bonded to the nitrogen of terminal —C(O)—NH— wheny is 0, t is an integer from 2 to 4, u is an integer from 1 to 20, w isan integer from 1 to 50, and z is an integer from 1 to
 50. 2. Thecomposition of claim 1, further comprising one or more brighteners,suppressors, surfactants, acids, brightener breakdown inhibitioncompounds and alkali metal salts.
 3. The composition of claim 1, whereinthe metal ions are copper ions.